UGB8JCTHE3/81 - DIODE ARRAY GP 600V 4A TO263AB

Fabricant Nimewo Pati

UGB8JCTHE3/81

Entèn Nimewo Pati

AX-UGB8JCTHE3/81

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE ARRAY GP 600V 4A TO263AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

37380 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen UGB8JCTHE3/81 nan stock pou vann.

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Espesifikasyon pou UGB8JCTHE3/81

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : UGB8JCTHE3/81

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE ARRAY GP 600V 4A TO263AB

Seri : -

Estati Pati : Obsolete

Konfigirasyon dyòd : 1 Pair Common Cathode

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 4A

Voltage - Forward (Vf) (Max) @ Si : 1.75V @ 4A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 50ns

Kouran - Fèy Reverse @ Vr : 30µA @ 600V

Operating Tanperati - Junction : -55°C ~ 150°C

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : UGB8 , UGB8JC

dokiman pou UGB8JCTHE3/81

Fich : UGB8JCTHE3/81.pdf

pwodwi ki gen rapò pou UGB8JCTHE3/81 Vishay Semiconductor Diodes Division

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