IRFL014NPBF - MOSFET N-CH 55V 1.9A SOT223

Fabricant Nimewo Pati

IRFL014NPBF

Entèn Nimewo Pati

AX-IRFL014NPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 55V 1.9A SOT223

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

68855 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFL014NPBF nan stock pou vann.

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Espesifikasyon pou IRFL014NPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFL014NPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 55V 1.9A SOT223

Seri : HEXFET®

Estati Pati : Discontinued at Digi-Key

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 55V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.9A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 160 mOhm @ 1.9A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 190pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-223

Pake / Ka : TO-261-4, TO-261AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRF , IRFL0

dokiman pou IRFL014NPBF

Fich : IRFL014NPBF.pdf

pwodwi ki gen rapò pou IRFL014NPBF Infineon Technologies

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