DMG4N60SK3-13 - MOSFET BVDSS 501V 650V TO252 T

Fabricant Nimewo Pati

DMG4N60SK3-13

Entèn Nimewo Pati

AX-DMG4N60SK3-13

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET BVDSS 501V 650V TO252 T

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

22104 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen DMG4N60SK3-13 nan stock pou vann.

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Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou DMG4N60SK3-13

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DMG4N60SK3-13

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET BVDSS 501V 650V TO252 T

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.7A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 2.3 Ohm @ 2A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 14.3nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 532pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 48W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DMG4 , DMG4N6

dokiman pou DMG4N60SK3-13

Fich : DMG4N60SK3-13.pdf

pwodwi ki gen rapò pou DMG4N60SK3-13 Diodes Incorporated

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