BYV30JT-600PQ - DIODE GEN PURP 600V 30A TO-3P

Fabricant Nimewo Pati

BYV30JT-600PQ

Entèn Nimewo Pati

AX-BYV30JT-600PQ

Fabricant

WeEn Semiconductors

Kout Deskripsyon

DIODE GEN PURP 600V 30A TO-3P

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

26565 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BYV30JT-600PQ nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BYV30JT-600PQ

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BYV30JT-600PQ

Fabricant : WeEn Semiconductors

Deskripsyon : DIODE GEN PURP 600V 30A TO-3P

Seri : -

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 30A

Voltage - Forward (Vf) (Max) @ Si : 1.8V @ 30A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 65ns

Kouran - Fèy Reverse @ Vr : 10µA @ 600V

Kapasite @ Vr, F : -

Mounting Kalite : Through Hole

Pake / Ka : TO-3P-3, SC-65-3

Pake Aparèy Founisè : TO-3P

Operating Tanperati - Junction : 175°C (Max)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BYV3 , BYV30J

dokiman pou BYV30JT-600PQ

Fich : BYV30JT-600PQ.pdf

pwodwi ki gen rapò pou BYV30JT-600PQ WeEn Semiconductors

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