FQP13N10L - MOSFET N-CH 100V 12.8A TO-220

Fabricant Nimewo Pati

FQP13N10L

Entèn Nimewo Pati

AX-FQP13N10L

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 12.8A TO-220

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

362480 Pieces

referans pri

~~USD 0.774~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou FQP13N10L

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Nimewo pati : FQP13N10L

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 12.8A TO-220

Seri : QFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12.8A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 180 mOhm @ 6.4A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 520pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 65W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQP , FQP1

dokiman pou FQP13N10L

Fich : FQP13N10L.pdf

pwodwi ki gen rapò pou FQP13N10L ON Semiconductor

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