SI5915BDC-T1-GE3 - MOSFET 2P-CH 8V 4A 1206-8

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Entèn Nimewo Pati
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Kout Deskripsyon
MOSFET 2P-CH 8V 4A 1206-8
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Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
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27839 Pieces
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Espesifikasyon pou SI5915BDC-T1-GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI5915BDC-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET 2P-CH 8V 4A 1206-8
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A
RD sou (Max) @ Id, Vgs : 70 mOhm @ 3.3A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds : 420pF @ 4V
Pouvwa - Max : 3.1W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SMD, Flat Lead
Pake Aparèy Founisè : 1206-8 ChipFET™
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SI591 , SI5915BD

dokiman pou SI5915BDC-T1-GE3

pwodwi ki gen rapò pou SI5915BDC-T1-GE3 Vishay Siliconix

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