FGD3N60LSDTM-T - INTEGRATED CIRCUIT

Fabricant Nimewo Pati

FGD3N60LSDTM-T

Entèn Nimewo Pati

AX-FGD3N60LSDTM-T

Fabricant

ON Semiconductor

Kout Deskripsyon

INTEGRATED CIRCUIT

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

57840 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FGD3N60LSDTM-T nan stock pou vann.

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Espesifikasyon pou FGD3N60LSDTM-T

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FGD3N60LSDTM-T

Fabricant : ON Semiconductor

Deskripsyon : INTEGRATED CIRCUIT

Seri : -

Estati Pati : Obsolete

Kalite IGBT : -

Voltage - Pèseptè ki emèt deba (Max) : 600V

Kouran - Pèseptè (Ic) (Max) : 6A

Kouran - Pèseptè batman (Icm) : 25A

Vce (sou) (Max) @ Vge, Ic : 1.5V @ 10V, 3A

Pouvwa - Max : 40W

Oblije chanje enèji : 250µJ (on), 1mJ (off)

Kalite Antre : Standard

Gate chaje : 12.5nC

Td (on / off) @ 25 ° C : 40ns/600ns

Kondisyon egzamen an : 480V, 3A, 470 Ohm, 10V

Ranvèse Tan Reverse (trr) : 234ns

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pake Aparèy Founisè : TO-252, (D-Pak)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FGD3 , FGD3N60

dokiman pou FGD3N60LSDTM-T

Fich : FGD3N60LSDTM-T.pdf

pwodwi ki gen rapò pou FGD3N60LSDTM-T ON Semiconductor

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