VS-12EWH06FNTR-M3 - DIODE GEN PURPOSE 600V 12A DPAK

Fabricant Nimewo Pati

VS-12EWH06FNTR-M3

Entèn Nimewo Pati

AX-VS-12EWH06FNTR-M3

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURPOSE 600V 12A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

845730 Pieces

referans pri

~~USD 0.33174~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen VS-12EWH06FNTR-M3 nan stock pou vann.

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Espesifikasyon pou VS-12EWH06FNTR-M3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : VS-12EWH06FNTR-M3

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURPOSE 600V 12A DPAK

Seri : FRED Pt®

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 12A

Voltage - Forward (Vf) (Max) @ Si : 2.5V @ 12A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 10µA @ 600V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pake Aparèy Founisè : D-PAK (TO-252AA)

Operating Tanperati - Junction : -65°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : VS-12 , VS-12EWH

dokiman pou VS-12EWH06FNTR-M3

Fich : VS-12EWH06FNTR-M3.pdf

pwodwi ki gen rapò pou VS-12EWH06FNTR-M3 Vishay Semiconductor Diodes Division

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