APTM120DA30CT1G - MOSFET N-CH 1200V 31A SP1

Fabricant Nimewo Pati

APTM120DA30CT1G

Entèn Nimewo Pati

AX-APTM120DA30CT1G

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET N-CH 1200V 31A SP1

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

17864 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen APTM120DA30CT1G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou APTM120DA30CT1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : APTM120DA30CT1G

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET N-CH 1200V 31A SP1

Seri : POWER MOS 8™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 31A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 360 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 5V @ 2.5mA

Chaje Gate (Qg) (Max) @ Vgs : 560nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 14560pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 657W (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake Aparèy Founisè : SP1

Pake / Ka : SP1

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : APTM1 , APTM120

dokiman pou APTM120DA30CT1G

Fich : APTM120DA30CT1G.pdf

pwodwi ki gen rapò pou APTM120DA30CT1G Microsemi Corporation

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