ZXMN6A08GQTA - MOSFET N-CH 60VSOT223

Fabricant Nimewo Pati

ZXMN6A08GQTA

Entèn Nimewo Pati

AX-ZXMN6A08GQTA

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET N-CH 60VSOT223

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

977760 Pieces

referans pri

~~USD 0.286944~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen ZXMN6A08GQTA nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou ZXMN6A08GQTA

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : ZXMN6A08GQTA

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET N-CH 60VSOT223

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 80 mOhm @ 4.8A, 10V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 5.8nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 459pF @ 40V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-223

Pake / Ka : TO-261-4, TO-261AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : ZXMN , ZXMN6A

dokiman pou ZXMN6A08GQTA

Fich : ZXMN6A08GQTA.pdf

pwodwi ki gen rapò pou ZXMN6A08GQTA Diodes Incorporated

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