IGT60R190D1SATMA1 - IC GAN FET 600V 23A 8HSOF

Fabricant Nimewo Pati

IGT60R190D1SATMA1

Entèn Nimewo Pati

AX-IGT60R190D1SATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

IC GAN FET 600V 23A 8HSOF

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

53295 Pieces

referans pri

~~USD 5.263446~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IGT60R190D1SATMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IGT60R190D1SATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IGT60R190D1SATMA1

Fabricant : Infineon Technologies

Deskripsyon : IC GAN FET 600V 23A 8HSOF

Seri : CoolGaN™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : GaNFET (Gallium Nitride)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 1.6V @ 960µA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -10V

Antre kapasite (Ciss) (Max) @ Vds : 157pF @ 400V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 55.5W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-HSOF-8-3

Pake / Ka : 8-PowerSFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IGT60 , IGT60R19

dokiman pou IGT60R190D1SATMA1

Fich : IGT60R190D1SATMA1.pdf

pwodwi ki gen rapò pou IGT60R190D1SATMA1 Infineon Technologies

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