IGT60R190D1SATMA1 - IC GAN FET 600V 23A 8HSOF
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
IC GAN FET 600V 23A 8HSOF
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
53295 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IGT60R190D1SATMA1 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou IGT60R190D1SATMA1
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
IGT60R190D1SATMA1
Fabricant :
Infineon Technologies
Deskripsyon :
IC GAN FET 600V 23A 8HSOF
Seri :
CoolGaN™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
1.6V @ 960µA
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-10V
Antre kapasite (Ciss) (Max) @ Vds :
157pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
55.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-HSOF-8-3
Pake / Ka :
8-PowerSFN
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou IGT60R190D1SATMA1
Fich :
IGT60R190D1SATMA1.pdf
pwodwi ki gen rapò pou IGT60R190D1SATMA1 Infineon Technologies
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