GT10J312(Q) - IGBT 600V 10A 60W TO220SM

Fabricant Nimewo Pati

GT10J312(Q)

Entèn Nimewo Pati

AX-GT10J312(Q)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

IGBT 600V 10A 60W TO220SM

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

56610 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen GT10J312(Q) nan stock pou vann.

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Espesifikasyon pou GT10J312(Q)

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : GT10J312(Q)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : IGBT 600V 10A 60W TO220SM

Seri : -

Estati Pati : Obsolete

Kalite IGBT : -

Voltage - Pèseptè ki emèt deba (Max) : 600V

Kouran - Pèseptè (Ic) (Max) : 10A

Kouran - Pèseptè batman (Icm) : 20A

Vce (sou) (Max) @ Vge, Ic : 2.7V @ 15V, 10A

Pouvwa - Max : 60W

Oblije chanje enèji : -

Kalite Antre : Standard

Gate chaje : -

Td (on / off) @ 25 ° C : 400ns/400ns

Kondisyon egzamen an : 300V, 10A, 100 Ohm, 15V

Ranvèse Tan Reverse (trr) : 200ns

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pake Aparèy Founisè : TO-220SM

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : GT1 , GT10J

dokiman pou GT10J312(Q)

Fich : GT10J312(Q).pdf

pwodwi ki gen rapò pou GT10J312(Q) Toshiba Semiconductor and Storage

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