ALD212900APAL - MOSFET 2N-CH 10.6V 0.08A 8DIP

Fabricant Nimewo Pati

ALD212900APAL

Entèn Nimewo Pati

AX-ALD212900APAL

Fabricant

Advanced Linear Devices Inc.

Kout Deskripsyon

MOSFET 2N-CH 10.6V 0.08A 8DIP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

78455 Pieces

referans pri

~~USD 3.576~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen ALD212900APAL nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Espesifikasyon pou ALD212900APAL

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : ALD212900APAL

Fabricant : Advanced Linear Devices Inc.

Deskripsyon : MOSFET 2N-CH 10.6V 0.08A 8DIP

Seri : EPAD®, Zero Threshold™

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual) Matched Pair

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 10.6V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80mA

RD sou (Max) @ Id, Vgs : 14 Ohm

Vgs (th) (Max) @ Id : 10mV @ 20µA

Chaje Gate (Qg) (Max) @ Vgs : -

Antre kapasite (Ciss) (Max) @ Vds : 30pF @ 5V

Pouvwa - Max : 500mW

Operating Tanperati : 0°C ~ 70°C (TJ)

Mounting Kalite : Through Hole

Pake / Ka : 8-DIP (0.300", 7.62mm)

Pake Aparèy Founisè : 8-PDIP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : ALD2 , ALD212

dokiman pou ALD212900APAL

Fich : ALD212900APAL.pdf

pwodwi ki gen rapò pou ALD212900APAL Advanced Linear Devices Inc.

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