SI2304BDS-T1-E3 - MOSFET N-CH 30V 2.6A SOT23-3

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 30V 2.6A SOT23-3
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
3996295 Pieces
referans pri
USD 0.070206
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI2304BDS-T1-E3 nan stock pou vann.
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Espesifikasyon pou SI2304BDS-T1-E3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI2304BDS-T1-E3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 30V 2.6A SOT23-3
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 70 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 225pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 750mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3 (TO-236)
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SI230 , SI2304B

dokiman pou SI2304BDS-T1-E3

pwodwi ki gen rapò pou SI2304BDS-T1-E3 Vishay Siliconix

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