FDMD8900 - MOSFET 2N-CH 30V POWER

Fabricant Nimewo Pati

FDMD8900

Entèn Nimewo Pati

AX-FDMD8900

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET 2N-CH 30V POWER

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

482800 Pieces

referans pri

~~USD 0.581112~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDMD8900 nan stock pou vann.

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Espesifikasyon pou FDMD8900

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDMD8900

Fabricant : ON Semiconductor

Deskripsyon : MOSFET 2N-CH 30V POWER

Seri : -

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 19A, 17A

RD sou (Max) @ Id, Vgs : 4 mOhm @ 19A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 35nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 2605pF @ 15V

Pouvwa - Max : 2.1W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 12-PowerWDFN

Pake Aparèy Founisè : 12-Power3.3x5

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDMD

dokiman pou FDMD8900

Fich : FDMD8900.pdf

pwodwi ki gen rapò pou FDMD8900 ON Semiconductor

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