FQB27N25TM-F085 - MOSFET N-CH 250V 25.5A 131M

Fabricant Nimewo Pati

FQB27N25TM-F085

Entèn Nimewo Pati

AX-FQB27N25TM-F085

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 250V 25.5A 131M

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

203980 Pieces

referans pri

~~USD 1.37541~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQB27N25TM-F085 nan stock pou vann.

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Espesifikasyon pou FQB27N25TM-F085

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stock Resous : Franchize Distribitè / Fabricant Dirèk

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Nimewo pati : FQB27N25TM-F085

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 250V 25.5A 131M

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 250V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 131 mOhm @ 25.5A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 49nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1800pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 417W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQB27 , FQB27N2

dokiman pou FQB27N25TM-F085

Fich : FQB27N25TM-F085.pdf

pwodwi ki gen rapò pou FQB27N25TM-F085 ON Semiconductor

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