BSD314SPEH6327XTSA1 - MOSFET P-CH 30V 1.5A SOT363

Fabricant Nimewo Pati

BSD314SPEH6327XTSA1

Entèn Nimewo Pati

AX-BSD314SPEH6327XTSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET P-CH 30V 1.5A SOT363

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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4570935 Pieces

referans pri

~~USD 0.06138~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSD314SPEH6327XTSA1 nan stock pou vann.

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Espesifikasyon pou BSD314SPEH6327XTSA1

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSD314SPEH6327XTSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET P-CH 30V 1.5A SOT363

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 140 mOhm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 2V @ 6.3µA

Chaje Gate (Qg) (Max) @ Vgs : 2.9nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 294pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 500mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-SOT363-6

Pake / Ka : 6-VSSOP, SC-88, SOT-363

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSD314 , BSD314SPE

dokiman pou BSD314SPEH6327XTSA1

Fich : BSD314SPEH6327XTSA1.pdf

pwodwi ki gen rapò pou BSD314SPEH6327XTSA1 Infineon Technologies

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