IXTU1R4N60P - MOSFET N-CH 600V 1.4A TO251
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-IXTU1R4N60P
Fabricant
Kout Deskripsyon
MOSFET N-CH 600V 1.4A TO251
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
4168 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IXTU1R4N60P nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou IXTU1R4N60P
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
IXTU1R4N60P
Fabricant :
IXYS
Deskripsyon :
MOSFET N-CH 600V 1.4A TO251
Seri :
PolarHV™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
9 Ohm @ 700mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
5.2nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
140pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
50W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-251
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou IXTU1R4N60P
Fich :
IXTU1R4N60P.pdf
pwodwi ki gen rapò pou IXTU1R4N60P IXYS
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