STW65N65DM2AG - MOSFET N-CH 650V 60A

Fabricant Nimewo Pati

STW65N65DM2AG

Entèn Nimewo Pati

AX-STW65N65DM2AG

Fabricant

STMicroelectronics

Kout Deskripsyon

MOSFET N-CH 650V 60A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

58266 Pieces

referans pri

~~USD 5.778~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen STW65N65DM2AG nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou STW65N65DM2AG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : STW65N65DM2AG

Fabricant : STMicroelectronics

Deskripsyon : MOSFET N-CH 650V 60A

Seri : Automotive, AEC-Q101, MDmesh™ DM2

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 50 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 120nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 5500pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 446W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : STW6 , STW65N

dokiman pou STW65N65DM2AG

Fich : STW65N65DM2AG.pdf

pwodwi ki gen rapò pou STW65N65DM2AG STMicroelectronics

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