6A80GHB0G - DIODE GEN PURP 800V 6A R-6

Fabricant Nimewo Pati

6A80GHB0G

Entèn Nimewo Pati

AX-6A80GHB0G

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

DIODE GEN PURP 800V 6A R-6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3175595 Pieces

referans pri

~~USD 0.08835~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen 6A80GHB0G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou 6A80GHB0G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : 6A80GHB0G

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : DIODE GEN PURP 800V 6A R-6

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 800V

Kouran - Mwayèn Rèktifye (Io) : 6A

Voltage - Forward (Vf) (Max) @ Si : 1V @ 6A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 10µA @ 800V

Kapasite @ Vr, F : 60pF @ 4V, 1MHz

Mounting Kalite : Through Hole

Pake / Ka : R6, Axial

Pake Aparèy Founisè : R-6

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : 6A8 , 6A80

dokiman pou 6A80GHB0G

Fich : 6A80GHB0G.pdf

pwodwi ki gen rapò pou 6A80GHB0G Taiwan Semiconductor Corporation

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