EPC2107ENGRT - GAN TRANS 3N-CH 100V BUMPED DIE

Fabricant Nimewo Pati

EPC2107ENGRT

Entèn Nimewo Pati

AX-EPC2107ENGRT

Fabricant

EPC

Kout Deskripsyon

GAN TRANS 3N-CH 100V BUMPED DIE

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

538710 Pieces

referans pri

~~USD 0.5208~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen EPC2107ENGRT nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou EPC2107ENGRT

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : EPC2107ENGRT

Fabricant : EPC

Deskripsyon : GAN TRANS 3N-CH 100V BUMPED DIE

Seri : eGaN®

Estati Pati : Active

FET Kalite : 3 N-Channel (Half Bridge + Synchronous Bootstrap)

Karakteristik FET : GaNFET (Gallium Nitride)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.7A, 500mA

RD sou (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA

Chaje Gate (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V

Antre kapasite (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V

Pouvwa - Max : -

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 9-VFBGA

Pake Aparèy Founisè : 9-BGA (1.35x1.35)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : EPC2 , EPC210

dokiman pou EPC2107ENGRT

Fich : EPC2107ENGRT.pdf

pwodwi ki gen rapò pou EPC2107ENGRT EPC

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