FCP190N65S3R0 - MOSFET N-CH 650V 190MOHM TO220 I

Fabricant Nimewo Pati

FCP190N65S3R0

Entèn Nimewo Pati

AX-FCP190N65S3R0

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 650V 190MOHM TO220 I

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

327740 Pieces

referans pri

~~USD 0.856038~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FCP190N65S3R0 nan stock pou vann.

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Espesifikasyon pou FCP190N65S3R0

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FCP190N65S3R0

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 650V 190MOHM TO220 I

Seri : SuperFET® III

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 190 mOhm @ 8.5A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 1.7mA

Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1350pF @ 400V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 144W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FCP1 , FCP190

dokiman pou FCP190N65S3R0

Fich : FCP190N65S3R0.pdf

pwodwi ki gen rapò pou FCP190N65S3R0 ON Semiconductor

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