CSD25211W1015 - MOSFET P-CH 20V 3.2A 6DSBGA

Fabricant Nimewo Pati

CSD25211W1015

Entèn Nimewo Pati

AX-CSD25211W1015

Fabricant

Texas Instruments

Kout Deskripsyon

MOSFET P-CH 20V 3.2A 6DSBGA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2514010 Pieces

referans pri

~~USD 0.1116~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen CSD25211W1015 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou CSD25211W1015

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : CSD25211W1015

Fabricant : Texas Instruments

Deskripsyon : MOSFET P-CH 20V 3.2A 6DSBGA

Seri : NexFET™

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.2A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 33 mOhm @ 1.5A, 4.5V

Vgs (th) (Max) @ Id : 1.1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 4.1nC @ 4.5V

Vgs (Max) : -6V

Antre kapasite (Ciss) (Max) @ Vds : 570pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-DSBGA (1x1.5)

Pake / Ka : 6-UFBGA, DSBGA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : CSD2 , CSD252

dokiman pou CSD25211W1015

Fich : CSD25211W1015.pdf

pwodwi ki gen rapò pou CSD25211W1015 Texas Instruments

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