TK8Q65W,S1Q - MOSFET N-CH 650V 7.8A IPAK

Fabricant Nimewo Pati

TK8Q65W,S1Q

Entèn Nimewo Pati

AX-TK8Q65W,S1Q

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 650V 7.8A IPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

299745 Pieces

referans pri

~~USD 0.936~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TK8Q65W,S1Q nan stock pou vann.

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Espesifikasyon pou TK8Q65W,S1Q

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TK8Q65W,S1Q

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 650V 7.8A IPAK

Seri : DTMOSIV

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 670 mOhm @ 3.9A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 300µA

Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 570pF @ 300V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 80W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I-PAK

Pake / Ka : TO-251-3 Stub Leads, IPak

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TK8 , TK8Q6

dokiman pou TK8Q65W,S1Q

Fich : TK8Q65W,S1Q.pdf

pwodwi ki gen rapò pou TK8Q65W,S1Q Toshiba Semiconductor and Storage

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