IPB085N06L G - MOSFET N-CH 60V 80A TO-263

Fabricant Nimewo Pati

IPB085N06L G

Entèn Nimewo Pati

AX-IPB085N06L G

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 60V 80A TO-263

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

9239 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPB085N06L G nan stock pou vann.

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Espesifikasyon pou IPB085N06L G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPB085N06L G

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 60V 80A TO-263

Seri : OptiMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 8.2 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 2V @ 125µA

Chaje Gate (Qg) (Max) @ Vgs : 104nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3500pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 188W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TO263-3-2

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPB0 , IPB085

dokiman pou IPB085N06L G

Fich : IPB085N06L G.pdf

pwodwi ki gen rapò pou IPB085N06L G Infineon Technologies

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