FDS2672 - MOSFET N-CH 200V 3.9A 8-SOIC

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 200V 3.9A 8-SOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
558730 Pieces
referans pri
USD 0.50214
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDS2672 nan stock pou vann.
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Espesifikasyon pou FDS2672

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : FDS2672
Fabricant : ON Semiconductor
Deskripsyon : MOSFET N-CH 200V 3.9A 8-SOIC
Seri : UltraFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 70 mOhm @ 3.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 46nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2535pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOIC
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : FD , FDS

dokiman pou FDS2672

Fich : FDS2672.pdf

pwodwi ki gen rapò pou FDS2672 ON Semiconductor

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