VQ1001P-E3 - MOSFET 4N-CH 30V 0.83A 14DIP
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-VQ1001P-E3
Fabricant
Kout Deskripsyon
MOSFET 4N-CH 30V 0.83A 14DIP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
28413 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen VQ1001P-E3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou VQ1001P-E3
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
VQ1001P-E3
Fabricant :
Vishay Siliconix
Deskripsyon :
MOSFET 4N-CH 30V 0.83A 14DIP
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
4 N-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
830mA
RD sou (Max) @ Id, Vgs :
1.75 Ohm @ 200mA, 5V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
110pF @ 15V
Pouvwa - Max :
2W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
-
Pake Aparèy Founisè :
14-DIP
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou VQ1001P-E3
Fich :
VQ1001P-E3.pdf
pwodwi ki gen rapò pou VQ1001P-E3 Vishay Siliconix
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