DMTH10H025LK3Q-13 - MOSFET BVDSS 61V-100V TO252 TR

Fabricant Nimewo Pati

DMTH10H025LK3Q-13

Entèn Nimewo Pati

AX-DMTH10H025LK3Q-13

Fabricant

Diodes Incorporated

Kout Deskripsyon

MOSFET BVDSS 61V-100V TO252 TR

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

918455 Pieces

referans pri

~~USD 0.305472~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen DMTH10H025LK3Q-13 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou DMTH10H025LK3Q-13

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : DMTH10H025LK3Q-13

Fabricant : Diodes Incorporated

Deskripsyon : MOSFET BVDSS 61V-100V TO252 TR

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 51.7A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 22 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1477pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.1W (Ta)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252, (D-Pak)

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : DMTH1 , DMTH10H0

dokiman pou DMTH10H025LK3Q-13

Fich : DMTH10H025LK3Q-13.pdf

pwodwi ki gen rapò pou DMTH10H025LK3Q-13 Diodes Incorporated

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