PTAB182002TCV2R250XTMA1 - IC RF FET LDMOS 190W H-49248H-4

Fabricant Nimewo Pati

Entèn Nimewo Pati

Fabricant

Kout Deskripsyon

IC RF FET LDMOS 190W H-49248H-4

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

52926 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen PTAB182002TCV2R250XTMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PTAB182002TCV2R250XTMA1

Fabricant : Infineon Technologies

Deskripsyon : IC RF FET LDMOS 190W H-49248H-4

Seri : -

Estati Pati : Obsolete

Kalite tranzistò : LDMOS

Frekans : 1.805GHz ~ 1.88GHz

Akeri : 14.8dB

Voltage - Test : 28V

Kouran Rating : 10µA

Bwi figi : -

Kouran - Tès : 520mA

Pouvwa - Sòti : 29W

Voltage - Rated : 65V

Pake / Ka : H-49248H-4

Pake Aparèy Founisè : H-49248H-4

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PTAB182 , PTAB182002T

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