SE10FGHM3/I - DIODE GEN PURP 400V 1A DO219AB

Fabricant Nimewo Pati

SE10FGHM3/I

Entèn Nimewo Pati

AX-SE10FGHM3/I

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 400V 1A DO219AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

6118905 Pieces

referans pri

~~USD 0.045852~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SE10FGHM3/I nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SE10FGHM3/I

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SE10FGHM3/I

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 400V 1A DO219AB

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 400V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1.05V @ 1A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 780ns

Kouran - Fèy Reverse @ Vr : 5µA @ 400V

Kapasite @ Vr, F : 7.5pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : DO-219AB

Pake Aparèy Founisè : DO-219AB (SMF)

Operating Tanperati - Junction : -55°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SE1 , SE10F

dokiman pou SE10FGHM3/I

Fich : SE10FGHM3/I.pdf

pwodwi ki gen rapò pou SE10FGHM3/I Vishay Semiconductor Diodes Division

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