RJM0603JSC-00#12 - MOSFET 3N/3P-CH 60V 20A HSOP
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 3N/3P-CH 60V 20A HSOP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
28770 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen RJM0603JSC-00#12 nan stock pou vann.
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Espesifikasyon pou RJM0603JSC-00#12
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : RJM0603JSC-00#12
Fabricant : Renesas Electronics America
Deskripsyon : MOSFET 3N/3P-CH 60V 20A HSOP
Seri : Automotive, AEC-Q101
Estati Pati : Active
FET Kalite : 3 N and 3 P-Channel (3-Phase Bridge)
Karakteristik FET : Logic Level Gate, 4.5V Drive
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 20A
RD sou (Max) @ Id, Vgs : 20 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 43nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 2600pF @ 10V
Pouvwa - Max : 54W
Operating Tanperati : 175°C
Mounting Kalite : Surface Mount
Pake / Ka : 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Pake Aparèy Founisè : 20-HSOP
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou RJM0603JSC-00#12
Fich : RJM0603JSC-00#12.pdf
pwodwi ki gen rapò pou RJM0603JSC-00#12 Renesas Electronics America
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