HGT1S2N120CN - IGBT 1200V 13A 104W I2PAK

Fabricant Nimewo Pati

HGT1S2N120CN

Entèn Nimewo Pati

AX-HGT1S2N120CN

Fabricant

ON Semiconductor

Kout Deskripsyon

IGBT 1200V 13A 104W I2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

56016 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen HGT1S2N120CN nan stock pou vann.

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Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou HGT1S2N120CN

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HGT1S2N120CN

Fabricant : ON Semiconductor

Deskripsyon : IGBT 1200V 13A 104W I2PAK

Seri : -

Estati Pati : Obsolete

Kalite IGBT : NPT

Voltage - Pèseptè ki emèt deba (Max) : 1200V

Kouran - Pèseptè (Ic) (Max) : 13A

Kouran - Pèseptè batman (Icm) : 20A

Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 2.6A

Pouvwa - Max : 104W

Oblije chanje enèji : 96µJ (on), 355µJ (off)

Kalite Antre : Standard

Gate chaje : 30nC

Td (on / off) @ 25 ° C : 25ns/205ns

Kondisyon egzamen an : 960V, 2.6A, 51 Ohm, 15V

Ranvèse Tan Reverse (trr) : -

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pake Aparèy Founisè : TO-262

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HGT1 , HGT1S2

dokiman pou HGT1S2N120CN

Fich : HGT1S2N120CN.pdf

pwodwi ki gen rapò pou HGT1S2N120CN ON Semiconductor

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