RF4E080BNTR - MOSFET N-CH 30V 8A 8-HUML

Fabricant Nimewo Pati

RF4E080BNTR

Entèn Nimewo Pati

AX-RF4E080BNTR

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CH 30V 8A 8-HUML

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1982055 Pieces

referans pri

~~USD 0.141552~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RF4E080BNTR nan stock pou vann.

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Espesifikasyon pou RF4E080BNTR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RF4E080BNTR

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CH 30V 8A 8-HUML

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 17.6 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 14.5nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 660pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2W (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : HUML2020L8

Pake / Ka : 8-PowerUDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RF4 , RF4E0

dokiman pou RF4E080BNTR

Fich : RF4E080BNTR.pdf

pwodwi ki gen rapò pou RF4E080BNTR Rohm Semiconductor

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