IXFB210N20P - MOSFET N-CH 200V 210A PLUS264

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 200V 210A PLUS264
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
32543 Pieces
referans pri
USD 12.06672
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXFB210N20P nan stock pou vann.
D 'opsyon ak anbake tan:
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FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou IXFB210N20P

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IXFB210N20P
Fabricant : IXYS
Deskripsyon : MOSFET N-CH 200V 210A PLUS264
Seri : HiPerFET™, PolarP2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 210A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 10.5 mOhm @ 105A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs : 255nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 18600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1500W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS264™
Pake / Ka : TO-264-3, TO-264AA
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IXF , IXFB2

dokiman pou IXFB210N20P

pwodwi ki gen rapò pou IXFB210N20P IXYS

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