SI5517DU-T1-E3 - MOSFET N/P-CH 20V 6A CHIPFET

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N/P-CH 20V 6A CHIPFET
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
26887 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou SI5517DU-T1-E3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI5517DU-T1-E3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N/P-CH 20V 6A CHIPFET
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A
RD sou (Max) @ Id, Vgs : 39 mOhm @ 4.4A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds : 520pF @ 10V
Pouvwa - Max : 8.3W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® ChipFET™ Dual
Pake Aparèy Founisè : PowerPAK® ChipFet Dual
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SI55 , SI5517D

dokiman pou SI5517DU-T1-E3

pwodwi ki gen rapò pou SI5517DU-T1-E3 Vishay Siliconix

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