STI11NM60ND - MOSFET N-CH 600V 10A I2PAK

Fabricant Nimewo Pati

STI11NM60ND

Entèn Nimewo Pati

AX-STI11NM60ND

Fabricant

STMicroelectronics

Kout Deskripsyon

MOSFET N-CH 600V 10A I2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

61950 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen STI11NM60ND nan stock pou vann.

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Espesifikasyon pou STI11NM60ND

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : STI11NM60ND

Fabricant : STMicroelectronics

Deskripsyon : MOSFET N-CH 600V 10A I2PAK

Seri : FDmesh™ II

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 450 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 850pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 90W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : STI , STI11

dokiman pou STI11NM60ND

Fich : STI11NM60ND.pdf

pwodwi ki gen rapò pou STI11NM60ND STMicroelectronics

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