2SK1119(F) - MOSFET N-CH 1000V 4A TO-220AB

Fabricant Nimewo Pati

2SK1119(F)

Entèn Nimewo Pati

AX-2SK1119(F)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 1000V 4A TO-220AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

7968 Pieces

referans pri

~~USD 0~~

pri nou

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AXE Semiconductor gen 2SK1119(F) nan stock pou vann.

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Espesifikasyon pou 2SK1119(F)

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : 2SK1119(F)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 1000V 4A TO-220AB

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 1000V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3.8 Ohm @ 2A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 700pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 100W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220AB

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : 2SK , 2SK11

dokiman pou 2SK1119(F)

Fich : 2SK1119(F).pdf

pwodwi ki gen rapò pou 2SK1119(F) Toshiba Semiconductor and Storage

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