ES1JLHM2G - DIODE GEN PURP 600V 1A SUB SMA

Fabricant Nimewo Pati

ES1JLHM2G

Entèn Nimewo Pati

AX-ES1JLHM2G

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

DIODE GEN PURP 600V 1A SUB SMA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

6233095 Pieces

referans pri

~~USD 0.045012~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen ES1JLHM2G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Espesifikasyon pou ES1JLHM2G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : ES1JLHM2G

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : DIODE GEN PURP 600V 1A SUB SMA

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 1A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 35ns

Kouran - Fèy Reverse @ Vr : 5µA @ 600V

Kapasite @ Vr, F : 8pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : DO-219AB

Pake Aparèy Founisè : Sub SMA

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : ES1 , ES1J

dokiman pou ES1JLHM2G

Fich : ES1JLHM2G.pdf

pwodwi ki gen rapò pou ES1JLHM2G Taiwan Semiconductor Corporation

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