SI1016CX-T1-GE3 - MOSFET N/P-CH 20V SC89-6

Fabricant Nimewo Pati

SI1016CX-T1-GE3

Entèn Nimewo Pati

AX-SI1016CX-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N/P-CH 20V SC89-6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3171070 Pieces

referans pri

~~USD 0.088476~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI1016CX-T1-GE3 nan stock pou vann.

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Espesifikasyon pou SI1016CX-T1-GE3

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Nimewo pati : SI1016CX-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N/P-CH 20V SC89-6

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : N and P-Channel

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : -

RD sou (Max) @ Id, Vgs : 396 mOhm @ 500mA, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 2nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 43pF @ 10V

Pouvwa - Max : 220mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : SOT-563, SOT-666

Pake Aparèy Founisè : SC-89-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI101 , SI1016C

dokiman pou SI1016CX-T1-GE3

Fich : SI1016CX-T1-GE3.pdf

pwodwi ki gen rapò pou SI1016CX-T1-GE3 Vishay Siliconix

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