2SK3666-3-TB-E - JFET N-CH 10MA 200MW 3CP

Fabricant Nimewo Pati

2SK3666-3-TB-E

Entèn Nimewo Pati

AX-2SK3666-3-TB-E

Fabricant

ON Semiconductor

Kout Deskripsyon

JFET N-CH 10MA 200MW 3CP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4863810 Pieces

referans pri

~~USD 0.057684~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen 2SK3666-3-TB-E nan stock pou vann.

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Espesifikasyon pou 2SK3666-3-TB-E

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : 2SK3666-3-TB-E

Fabricant : ON Semiconductor

Deskripsyon : JFET N-CH 10MA 200MW 3CP

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Vòltaj - Dekonpozisyon (V (BR) GSS) : -

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj (Idss) @ Vds (Vgs = 0) : 1.2mA @ 10V

Kouran Drenaj (Id) - Max : 10mA

Voltage - Cutoff (VGS koupe) @ Id : 180mV @ 1µA

Antre kapasite (Ciss) (Max) @ Vds : 4pF @ 10V

Rezistans - RDS (Sou) : 200 Ohms

Pouvwa - Max : 200mW

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pake Aparèy Founisè : 3-CP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : 2SK3 , 2SK3666

dokiman pou 2SK3666-3-TB-E

Fich : 2SK3666-3-TB-E.pdf

pwodwi ki gen rapò pou 2SK3666-3-TB-E ON Semiconductor

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