NTMD6601NR2G - MOSFET 2N-CH 80V 1.1A 8SOIC

Fabricant Nimewo Pati

NTMD6601NR2G

Entèn Nimewo Pati

AX-NTMD6601NR2G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET 2N-CH 80V 1.1A 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

29029 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen NTMD6601NR2G nan stock pou vann.

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Espesifikasyon pou NTMD6601NR2G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NTMD6601NR2G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET 2N-CH 80V 1.1A 8SOIC

Seri : -

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 80V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.1A

RD sou (Max) @ Id, Vgs : 215 mOhm @ 2.2A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 400pF @ 25V

Pouvwa - Max : 600mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SOIC

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NTMD , NTMD66

dokiman pou NTMD6601NR2G

Fich : NTMD6601NR2G.pdf

pwodwi ki gen rapò pou NTMD6601NR2G ON Semiconductor

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