GA20SICP12-247 - TRANS SJT 1200V 45A TO247

Fabricant Nimewo Pati

GA20SICP12-247

Entèn Nimewo Pati

AX-GA20SICP12-247

Fabricant

GeneSiC Semiconductor

Kout Deskripsyon

TRANS SJT 1200V 45A TO247

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

67315 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen GA20SICP12-247 nan stock pou vann.

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Espesifikasyon pou GA20SICP12-247

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : GA20SICP12-247

Fabricant : GeneSiC Semiconductor

Deskripsyon : TRANS SJT 1200V 45A TO247

Seri : -

Estati Pati : Obsolete

FET Kalite : -

Teknoloji : SiC (Silicon Carbide Junction Transistor)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 45A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : 50 mOhm @ 20A

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : 3091pF @ 800V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 282W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247AB

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : GA20 , GA20SIC

dokiman pou GA20SICP12-247

Fich : GA20SICP12-247.pdf

pwodwi ki gen rapò pou GA20SICP12-247 GeneSiC Semiconductor

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