IDB30E120ATMA1 - DIODE GEN PURP 1.2KV 50A TO263-3

Fabricant Nimewo Pati

IDB30E120ATMA1

Entèn Nimewo Pati

AX-IDB30E120ATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

DIODE GEN PURP 1.2KV 50A TO263-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

348025 Pieces

referans pri

~~USD 0.806142~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IDB30E120ATMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IDB30E120ATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IDB30E120ATMA1

Fabricant : Infineon Technologies

Deskripsyon : DIODE GEN PURP 1.2KV 50A TO263-3

Seri : -

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 1200V

Kouran - Mwayèn Rèktifye (Io) : 50A (DC)

Voltage - Forward (Vf) (Max) @ Si : 2.15V @ 30A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 243ns

Kouran - Fèy Reverse @ Vr : 100µA @ 1200V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : PG-TO263-3

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IDB3 , IDB30E1

dokiman pou IDB30E120ATMA1

Fich : IDB30E120ATMA1.pdf

pwodwi ki gen rapò pou IDB30E120ATMA1 Infineon Technologies

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