SI8261BBC-C-IPR - DGTL ISO 3.75KV GATE DRVR 8DIPGW

Fabricant Nimewo Pati

SI8261BBC-C-IPR

Entèn Nimewo Pati

AX-SI8261BBC-C-IPR

Fabricant

Silicon Labs

Kout Deskripsyon

DGTL ISO 3.75KV GATE DRVR 8DIPGW

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

295570 Pieces

referans pri

~~USD 0.9492~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI8261BBC-C-IPR nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SI8261BBC-C-IPR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI8261BBC-C-IPR

Fabricant : Silicon Labs

Deskripsyon : DGTL ISO 3.75KV GATE DRVR 8DIPGW

Seri : Automotive, AEC-Q100

Estati Pati : Active

Teknoloji : Capacitive Coupling

Kantite chanèl yo : 1

Voltage - Izolasyon : 3750Vrms

Komen Mode Iminitè Tanporè (Min) : 35kV/µs

Pwopagasyon reta tpLH / tpHL (Max) : 60ns, 50ns

Batman kè lajè distòsyon (Max) : 28ns

Rise / Fall Time (Tip) : 5.5ns, 8.5ns

Kouran - Sòti segondè, ki ba : 500mA, 1.2A

Kouran - Peak Sòti : 4A

Voltage - Forward (Vf) (Tip) : 2.8V (Max)

Kouran - DC Forward (Si) (Max) : 30mA

Voltage - Pwovizyon pou : 9.4V ~ 30V

Operating Tanperati : -40°C ~ 125°C

Mounting Kalite : Surface Mount

Pake / Ka : 8-SMD, Gull Wing

Pake Aparèy Founisè : 8-DIP Gull Wing

Apwobasyon : CQC, CSA, UR, VDE

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI826 , SI8261B

dokiman pou SI8261BBC-C-IPR

Fich : SI8261BBC-C-IPR.pdf

pwodwi ki gen rapò pou SI8261BBC-C-IPR Silicon Labs

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