IRFU3711PBF - MOSFET N-CH 20V 100A I-PAK

Fabricant Nimewo Pati

IRFU3711PBF

Entèn Nimewo Pati

AX-IRFU3711PBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 20V 100A I-PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

68215 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFU3711PBF nan stock pou vann.

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Espesifikasyon pou IRFU3711PBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFU3711PBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 20V 100A I-PAK

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 6.5 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 44nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2980pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta), 120W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : IPAK (TO-251)

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRF , IRFU3

dokiman pou IRFU3711PBF

Fich : IRFU3711PBF.pdf

pwodwi ki gen rapò pou IRFU3711PBF Infineon Technologies

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