FQN1N60CBU - MOSFET N-CH 600V 0.3A TO-92

Fabricant Nimewo Pati

FQN1N60CBU

Entèn Nimewo Pati

AX-FQN1N60CBU

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 600V 0.3A TO-92

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Espesifikasyon pou FQN1N60CBU

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Nimewo pati : FQN1N60CBU

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 600V 0.3A TO-92

Seri : QFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 300mA (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 11.5 Ohm @ 150mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 6.2nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 170pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta), 3W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-92-3

Pake / Ka : TO-226-3, TO-92-3 (TO-226AA)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQN , FQN1N

dokiman pou FQN1N60CBU

Fich : FQN1N60CBU.pdf

pwodwi ki gen rapò pou FQN1N60CBU ON Semiconductor

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