RT1C060UNTR - MOSFET N-CH 20V 6A TSST8

Fabricant Nimewo Pati

RT1C060UNTR

Entèn Nimewo Pati

AX-RT1C060UNTR

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CH 20V 6A TSST8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3142515 Pieces

referans pri

~~USD 0.08928~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RT1C060UNTR nan stock pou vann.

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Espesifikasyon pou RT1C060UNTR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RT1C060UNTR

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CH 20V 6A TSST8

Seri : -

Estati Pati : Not For New Designs

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V

RD sou (Max) @ Id, Vgs : 28 mOhm @ 6A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 4.5V

Vgs (Max) : ±10V

Antre kapasite (Ciss) (Max) @ Vds : 870pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 650mW (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-TSST

Pake / Ka : 8-SMD, Flat Lead

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RT1 , RT1C0

dokiman pou RT1C060UNTR

Fich : RT1C060UNTR.pdf

pwodwi ki gen rapò pou RT1C060UNTR Rohm Semiconductor

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