FZ1800R12HE4B9HOSA2 - MODULE IGBT IHMB190-2

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MODULE IGBT IHMB190-2
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
9020 Pieces
referans pri
USD 555.99
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FZ1800R12HE4B9HOSA2 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou FZ1800R12HE4B9HOSA2

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : FZ1800R12HE4B9HOSA2
Fabricant : Infineon Technologies
Deskripsyon : MODULE IGBT IHMB190-2
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Single Switch
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 2735A
Pouvwa - Max : 11000W
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 1800A
Kouran - Cutoff Pèseptè (Max) : 5mA
Antre kapasite (Cies) @ Vce : 110nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : FZ1800 , FZ1800R12

dokiman pou FZ1800R12HE4B9HOSA2

pwodwi ki gen rapò pou FZ1800R12HE4B9HOSA2 Infineon Technologies

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