SIA416DJ-T1-GE3 - MOSFET N-CH 100V 11.3A SC70-6L

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 100V 11.3A SC70-6L
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1532630 Pieces
referans pri
USD 0.18306
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SIA416DJ-T1-GE3 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou SIA416DJ-T1-GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SIA416DJ-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 100V 11.3A SC70-6L
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11.3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 83 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 295pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.5W (Ta), 19W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SC-70-6 Single
Pake / Ka : PowerPAK® SC-70-6
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SIA41 , SIA416D

dokiman pou SIA416DJ-T1-GE3

pwodwi ki gen rapò pou SIA416DJ-T1-GE3 Vishay Siliconix

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