NX7002BKMBYL - MOSFET N-CH 60V SGL 3-DFN1006B

Fabricant Nimewo Pati

NX7002BKMBYL

Entèn Nimewo Pati

AX-NX7002BKMBYL

Fabricant

Nexperia USA Inc.

Kout Deskripsyon

MOSFET N-CH 60V SGL 3-DFN1006B

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

8483435 Pieces

referans pri

~~USD 0.033072~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen NX7002BKMBYL nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou NX7002BKMBYL

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NX7002BKMBYL

Fabricant : Nexperia USA Inc.

Deskripsyon : MOSFET N-CH 60V SGL 3-DFN1006B

Seri : TrenchMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 350mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 2.8 Ohm @ 200mA, 10V

Vgs (th) (Max) @ Id : 2.1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 1nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 23.6pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 350mW (Ta), 3.1W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DFN1006B-3

Pake / Ka : 3-XFDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NX70 , NX7002

dokiman pou NX7002BKMBYL

Fich : NX7002BKMBYL.pdf

pwodwi ki gen rapò pou NX7002BKMBYL Nexperia USA Inc.

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